PMEG120G30ELPX
  • Share:

Nexperia USA Inc. PMEG120G30ELPX

Manufacturer No:
PMEG120G30ELPX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMEG120G30ELPX Datasheet
ECAD Model:
-
Description:
PMEG120G30ELP/SOD128/FLATPOWER
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:SiGe (Silicon Germanium)
Voltage - DC Reverse (Vr) (Max):120 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:840 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):11 ns
Current - Reverse Leakage @ Vr:30 nA @ 120 V
Capacitance @ Vr, F:103pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-128
Supplier Device Package:SOD-128/CFP5
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.50
915

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG120G30ELPX PMEG150G30ELPX   PMEG120G20ELPX   PMEG120G30ELPJ  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Obsolete
Diode Type SiGe (Silicon Germanium) - SiGe (Silicon Germanium) SiGe (Silicon Germanium)
Voltage - DC Reverse (Vr) (Max) 120 V - 120 V 120 V
Current - Average Rectified (Io) 3A - 2A 3A
Voltage - Forward (Vf) (Max) @ If 840 mV @ 3 A - 840 mV @ 2 A 840 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) - Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 11 ns - 11 ns 11 ns
Current - Reverse Leakage @ Vr 30 nA @ 120 V - 30 nA @ 120 V 30 nA @ 120 V
Capacitance @ Vr, F 103pF @ 1V, 1MHz - 75pF @ 1V, 1MHz 103pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-128 SOD-128 SOD-128 SOD-128
Supplier Device Package SOD-128/CFP5 SOD-128/CFP5 SOD-128/CFP5 SOD-128/CFP5
Operating Temperature - Junction 175°C (Max) - 175°C (Max) 175°C (Max)

Related Product By Categories

SMMSD701T1G
SMMSD701T1G
onsemi
DIODE SCHOTTKY 70V 200MA SOD123
SSA210
SSA210
onsemi
DIODE SCHOTTKY 2A 100V SMA
RGL41K-E3/96
RGL41K-E3/96
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 1A DO213AB
S1PJHM3/85A
S1PJHM3/85A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO220AA
S5A-M3/57T
S5A-M3/57T
Vishay General Semiconductor - Diodes Division
DIODE GPP 5A 50V DO-214AB
CURC303-G
CURC303-G
Comchip Technology
DIODE GEN PURP 200V 3A DO214AB
DFLR1800-7
DFLR1800-7
Diodes Incorporated
DIODE GP 800V 1A POWERDI123
VS-6EWX06FNHM3
VS-6EWX06FNHM3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 6A D-PAK
VS-20ETF12-M3
VS-20ETF12-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 20A TO220AC
SFT12G R0G
SFT12G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A TS-1
RS1JHR3G
RS1JHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AC
GS1ME-TPS05
GS1ME-TPS05
Micro Commercial Co
DIODE GEN PURP 1A DO214AC

Related Product By Brand

PMEG2010EPK,315
PMEG2010EPK,315
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A DFN1608D-2
PZU27BA,115
PZU27BA,115
Nexperia USA Inc.
DIODE ZENER 27V 320MW SOD323
BZX84-A22,235
BZX84-A22,235
Nexperia USA Inc.
DIODE ZENER 22V 250MW TO236AB
BC857BW/ZLF
BC857BW/ZLF
Nexperia USA Inc.
TRANS SOT323
PDTA143ZT,235
PDTA143ZT,235
Nexperia USA Inc.
TRANS PREBIAS PNP 250MW TO236AB
IP4035CX24/LF/P,13
IP4035CX24/LF/P,13
Nexperia USA Inc.
FILTER RC(PI) 1 KOHM/50PF SMD
74HC366D,652
74HC366D,652
Nexperia USA Inc.
IC BUFFER INVERT 6V 16SO
74AHC74D,118
74AHC74D,118
Nexperia USA Inc.
IC FF D-TYPE DUAL 1BIT 14SO
74AUP1G08GS,132
74AUP1G08GS,132
Nexperia USA Inc.
IC GATE AND 1CH 2-INP 6XSON
74AHC3G14DP-Q100H
74AHC3G14DP-Q100H
Nexperia USA Inc.
IC INVERT SCHMITT 3CH 3IN 8TSSOP
74HC2G02DP125
74HC2G02DP125
Nexperia USA Inc.
IC GATE NOR 2CH 2-INP 8TSSOP
74HCT30DB,118
74HCT30DB,118
Nexperia USA Inc.
IC GATE NAND 1CH 8-INP 14SSOP