PMEG120G20ELPX
  • Share:

Nexperia USA Inc. PMEG120G20ELPX

Manufacturer No:
PMEG120G20ELPX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMEG120G20ELPX Datasheet
ECAD Model:
-
Description:
PMEG120G20ELP/SOD128/FLATPOWER
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:SiGe (Silicon Germanium)
Voltage - DC Reverse (Vr) (Max):120 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:840 mV @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):11 ns
Current - Reverse Leakage @ Vr:30 nA @ 120 V
Capacitance @ Vr, F:75pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-128
Supplier Device Package:SOD-128/CFP5
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.54
694

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG120G20ELPX PMEG120G20ELRX   PMEG120G30ELPX   PMEG150G20ELPX   PMEG120G20ELPJ  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Obsolete
Diode Type SiGe (Silicon Germanium) SiGe (Silicon Germanium) SiGe (Silicon Germanium) - SiGe (Silicon Germanium)
Voltage - DC Reverse (Vr) (Max) 120 V 120 V 120 V - 120 V
Current - Average Rectified (Io) 2A 2A 3A - 2A
Voltage - Forward (Vf) (Max) @ If 840 mV @ 2 A 840 mV @ 2 A 840 mV @ 3 A - 840 mV @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) - Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 11 ns 11 ns 11 ns - 11 ns
Current - Reverse Leakage @ Vr 30 nA @ 120 V 30 nA @ 120 V 30 nA @ 120 V - 30 nA @ 120 V
Capacitance @ Vr, F 75pF @ 1V, 1MHz 75pF @ 1V, 1MHz 103pF @ 1V, 1MHz - 75pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount - Surface Mount
Package / Case SOD-128 SOD-123W SOD-128 - SOD-128
Supplier Device Package SOD-128/CFP5 SOD-123W SOD-128/CFP5 - SOD-128/CFP5
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) - 175°C (Max)

Related Product By Categories

B240-13-F
B240-13-F
Diodes Incorporated
DIODE SCHOTTKY 40V 2A SMB
S1MBH
S1MBH
Taiwan Semiconductor Corporation
DIODE GEN PURP 1000V 1A DO214AA
1N1190AR
1N1190AR
GeneSiC Semiconductor
DIODE GEN PURP REV 600V 40A DO5
NTE6045
NTE6045
NTE Electronics, Inc
R-1KV PRV 60A ANODE CASE
SJPL-D2
SJPL-D2
Sanken
DIODE GEN PURP 200V 1A SJP
VS-20ETF12STRL-M3
VS-20ETF12STRL-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 20A TO263AB
VS-SD1500C12L
VS-SD1500C12L
Vishay General Semiconductor - Diodes Division
DIODE GP 1.2KV 1600A DO200AB
GR1J-F1-0000HF
GR1J-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 600V 1A DO214AC
G4S06510DT
G4S06510DT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
ES3C M6G
ES3C M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
SS215LHRUG
SS215LHRUG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 2A SUB SMA
ES3C V6G
ES3C V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB

Related Product By Brand

IP4302CX2/A,315
IP4302CX2/A,315
Nexperia USA Inc.
TVS DIODE 2CSP
BZX84W-C24F
BZX84W-C24F
Nexperia USA Inc.
DIODE ZENER 24V 275MW SOT323
SZMM3Z36VT1GX
SZMM3Z36VT1GX
Nexperia USA Inc.
SZMM3Z36VT1G/SOD323/SOD2
BZX884S-C6V2-QYL
BZX884S-C6V2-QYL
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC817DPN,115
BC817DPN,115
Nexperia USA Inc.
TRANS NPN/PNP 45V 0.5A 6TSOP
PDTD143ETVL
PDTD143ETVL
Nexperia USA Inc.
TRANS PREBIAS NPN 0.425W
PXN7R7-25QLJ
PXN7R7-25QLJ
Nexperia USA Inc.
PXN7R7-25QL/SOT8002/MLPAK33
74LVC1G07GW-Q100H
74LVC1G07GW-Q100H
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 5TSSOP
74LV245D,118
74LV245D,118
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 20SO
74HCT280D,653
74HCT280D,653
Nexperia USA Inc.
IC PARITY GEN/CHKER 9-BIT 14SO
74CB3Q3253PWJ
74CB3Q3253PWJ
Nexperia USA Inc.
IC MUX/DEMUX 2 X 4:1 16TSSOP
CBT3257APW,112
CBT3257APW,112
Nexperia USA Inc.
IC MUX/DEMUX 4 X 2:1 16TSSOP