PMEG100T30ELP-QX
  • Share:

Nexperia USA Inc. PMEG100T30ELP-QX

Manufacturer No:
PMEG100T30ELP-QX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMEG100T30ELP-QX Datasheet
ECAD Model:
-
Description:
SCHOTTKYS IN CFP PACKAGES
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:800 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):12.5 ns
Current - Reverse Leakage @ Vr:1.75 µA @ 100 V
Capacitance @ Vr, F:300pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-128
Supplier Device Package:SOD-128/CFP5
Operating Temperature - Junction:175°C
0 Remaining View Similar

In Stock

$0.19
506

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG100T30ELP-QX PMEG100T30ELR-QX   PMEG100T50ELP-QX   PMEG10030ELP-QX   PMEG100T20ELP-QX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V 100 V 100 V
Current - Average Rectified (Io) 3A 3A 5A 3A 2A
Voltage - Forward (Vf) (Max) @ If 800 mV @ 3 A 800 mV @ 3 A 895 mV @ 5 A 770 mV @ 3 A 800 mV @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 12.5 ns 12.5 ns 12.5 ns 8 ns 12 ns
Current - Reverse Leakage @ Vr 1.75 µA @ 100 V 1.75 µA @ 100 V 1.75 µA @ 100 V 450 nA @ 100 V 1.25 µA @ 100 V
Capacitance @ Vr, F 300pF @ 1V, 1MHz 310pF @ 1V, 1MHz 300pF @ 1V, 1MHz 200pF @ 1V, 1MHz 200pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-128 SOD-123W SOD-128 SOD-128 SOD-128
Supplier Device Package SOD-128/CFP5 SOD-123W SOD-128/CFP5 SOD-128/CFP5 SOD-128/CFP5
Operating Temperature - Junction 175°C 175°C 175°C 175°C 175°C

Related Product By Categories

S1ML
S1ML
Taiwan Semiconductor Corporation
DIODE GEN PURP 1KV 1A SUB SMA
S1GFSHMWG
S1GFSHMWG
Taiwan Semiconductor Corporation
DIODE, 1A, 400V, AEC-Q101, SOD-1
HS5A V7G
HS5A V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 5A DO214AB
GP3D030A120B
GP3D030A120B
SemiQ
SIC SCHOTTKY DIODE 1200V TO247-2
MURS115T3G
MURS115T3G
onsemi
DIODE GEN PURP 150V 2A SMB
VS-20ETS08STRR-M3
VS-20ETS08STRR-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 20A TO263AB
GR1M
GR1M
SURGE
1A -1000V - SMA (DO-214AC) - REC
G3S06508C
G3S06508C
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 6A 2-PIN
SE15PD-E3/84A
SE15PD-E3/84A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1.5A DO220AA
RGP10DHM3/73
RGP10DHM3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AL
S3D R7G
S3D R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
ES1BL MTG
ES1BL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA

Related Product By Brand

PESD2IVN27-UX
PESD2IVN27-UX
Nexperia USA Inc.
TVS DIODE 27VWM 45VC SOT323
BZX38450-C27X
BZX38450-C27X
Nexperia USA Inc.
BZX38450-C27/SOD323/SOD2
BZX38450-C16-QX
BZX38450-C16-QX
Nexperia USA Inc.
BZX38450-C16-Q/SOD323/SOD2
PDZ4.7BGW115
PDZ4.7BGW115
Nexperia USA Inc.
NOW NEXPERIA PDZ4.7BGW - ZENER D
BZV49-C11,115
BZV49-C11,115
Nexperia USA Inc.
DIODE ZENER 11V 1W SOT89
BZX8450-C3V3-QVL
BZX8450-C3V3-QVL
Nexperia USA Inc.
BZX8450-C3V3-Q/SOT23/TO-236AB
BZX884S-B5V6-QYL
BZX884S-B5V6-QYL
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCV28,115
BCV28,115
Nexperia USA Inc.
TRANS PNP DARL 30V 0.5A SOT89
BUK6D81-80EX
BUK6D81-80EX
Nexperia USA Inc.
MOSFET N-CH 80V 3.2A/9.8A 6DFN
PMN27UPH
PMN27UPH
Nexperia USA Inc.
MOSFET P-CH 20V 5.7A 6TSOP
74LVC823APW,112
74LVC823APW,112
Nexperia USA Inc.
IC FF D-TYPE SNGL 9BIT 24TSSOP
74AHCT595D,118
74AHCT595D,118
Nexperia USA Inc.
IC 8BIT SHFT REGSTR 3-ST 16SOIC