PMEG100T10ELR-QX
  • Share:

Nexperia USA Inc. PMEG100T10ELR-QX

Manufacturer No:
PMEG100T10ELR-QX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMEG100T10ELR-QX Datasheet
ECAD Model:
-
Description:
PMEG100T10ELR-Q/SOD123W/SOD2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:750 mV @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):11.5 ns
Current - Reverse Leakage @ Vr:900 nA @ 100 V
Capacitance @ Vr, F:125pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123W
Supplier Device Package:SOD-123W
Operating Temperature - Junction:175°C
0 Remaining View Similar

In Stock

$0.46
2,024

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG100T10ELR-QX PMEG100T20ELR-QX   PMEG100T30ELR-QX   PMEG10010ELR-QX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V 100 V
Current - Average Rectified (Io) 1A 2A 3A 1A
Voltage - Forward (Vf) (Max) @ If 750 mV @ 1 A 800 mV @ 2 A 800 mV @ 3 A 770 mV @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 11.5 ns 12 ns 12.5 ns 3.7 ns
Current - Reverse Leakage @ Vr 900 nA @ 100 V 1.25 µA @ 100 V 1.75 µA @ 100 V 150 nA @ 100 V
Capacitance @ Vr, F 125pF @ 1V, 1MHz 200pF @ 1V, 1MHz 310pF @ 1V, 1MHz 70pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123W SOD-123W SOD-123W SOD-123W
Supplier Device Package SOD-123W SOD-123W SOD-123W SOD-123W
Operating Temperature - Junction 175°C 175°C 175°C 175°C

Related Product By Categories

US1G-E3/5AT
US1G-E3/5AT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO214AC
SBR8A60P5-13
SBR8A60P5-13
Diodes Incorporated
DIODE SBR 60V 8A POWERDI5
ES1D-E3/5AT
ES1D-E3/5AT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO214AC
SR210 A0G
SR210 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 2A DO204AC
8TQ080STRL
8TQ080STRL
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 80V 8A D2PAK
VS-1N5819
VS-1N5819
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 1A DO204AL
GP02-35HE3/73
GP02-35HE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 3.5KV 250MA DO204
BY229B-400HE3/81
BY229B-400HE3/81
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 8A TO263AB
MPG06GHE3/54
MPG06GHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A MPG06
RM 4AM
RM 4AM
Sanken
DIODE GEN PURP 600V 3.2A AXIAL
SS115LHMQG
SS115LHMQG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 1A SUB SMA
RBR2L30ADDTE25
RBR2L30ADDTE25
Rohm Semiconductor
LOW VF TYPE AUTOMOTIVE SCHOTTKY

Related Product By Brand

PMEG60T10ELXDX
PMEG60T10ELXDX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES PMEG60
PMEG60T10ELR-QX
PMEG60T10ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
ES1DRX
ES1DRX
Nexperia USA Inc.
DIODE GEN PURP 200V 1A SOD123W
BZX84-B2V7,215
BZX84-B2V7,215
Nexperia USA Inc.
DIODE ZENER 2.7V 250MW TO236AB
BZX8850S-C36-QYL
BZX8850S-C36-QYL
Nexperia USA Inc.
BZX8850S-C36-Q/SOD882BD/XSON2
MM3Z33VT1GX
MM3Z33VT1GX
Nexperia USA Inc.
VOLTAGE REGULATOR DIODES
PMPB08R5XNX
PMPB08R5XNX
Nexperia USA Inc.
PMPB08R5XN/SOT1220-2/DFN2020M-
74AHCT17APWJ
74AHCT17APWJ
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 14TSSOP
74LVC1G32GW-Q100H
74LVC1G32GW-Q100H
Nexperia USA Inc.
IC GATE OR 1CH 2-INP 5TSSOP
74LV02D,112
74LV02D,112
Nexperia USA Inc.
IC GATE NOR 4CH 2-INP 14SO
74LVCH16373ADGVJ
74LVCH16373ADGVJ
Nexperia USA Inc.
74LVCH16373ADGV/SOT480/TSSOP48
74AHC139D,112
74AHC139D,112
Nexperia USA Inc.
IC DECODER/DEMUX 1 X 2:4 16SO