PMEG100T080ELPE-QZ
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Nexperia USA Inc. PMEG100T080ELPE-QZ

Manufacturer No:
PMEG100T080ELPE-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMEG100T080ELPE-QZ Datasheet
ECAD Model:
-
Description:
PMEG100T080ELPE-Q/SOT1289B/CFP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:810 mV @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):19 ns
Current - Reverse Leakage @ Vr:4 µA @ 100 V
Capacitance @ Vr, F:680pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-277, 3-PowerDFN
Supplier Device Package:CFP15B
Operating Temperature - Junction:175°C
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Similar Products

Part Number PMEG100T080ELPE-QZ PMEG100V080ELPE-QZ   PMEG100T030ELPE-QZ   PMEG100T050ELPE-QZ  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V 100 V
Current - Average Rectified (Io) 8A 8A 3A 5A
Voltage - Forward (Vf) (Max) @ If 810 mV @ 8 A 850 mV @ 8 A 710 mV @ 3 A 810 mV @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 19 ns 10 ns 12 ns 12 ns
Current - Reverse Leakage @ Vr 4 µA @ 100 V 500 nA @ 100 V 2.5 µA @ 100 V 2.5 µA @ 100 V
Capacitance @ Vr, F 680pF @ 1V, 1MHz 97pF @ 10V, 1MHz 410pF @ 1V, 1MHz 410pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-277, 3-PowerDFN TO-277, 3-PowerDFN TO-277, 3-PowerDFN TO-277, 3-PowerDFN
Supplier Device Package CFP15B CFP15B CFP15B CFP15B
Operating Temperature - Junction 175°C 175°C 175°C 175°C

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