PMEG100T080ELPE-QZ
  • Share:

Nexperia USA Inc. PMEG100T080ELPE-QZ

Manufacturer No:
PMEG100T080ELPE-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMEG100T080ELPE-QZ Datasheet
ECAD Model:
-
Description:
PMEG100T080ELPE-Q/SOT1289B/CFP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:810 mV @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):19 ns
Current - Reverse Leakage @ Vr:4 µA @ 100 V
Capacitance @ Vr, F:680pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-277, 3-PowerDFN
Supplier Device Package:CFP15B
Operating Temperature - Junction:175°C
0 Remaining View Similar

In Stock

$0.73
1,222

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG100T080ELPE-QZ PMEG100V080ELPE-QZ   PMEG100T030ELPE-QZ   PMEG100T050ELPE-QZ  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V 100 V
Current - Average Rectified (Io) 8A 8A 3A 5A
Voltage - Forward (Vf) (Max) @ If 810 mV @ 8 A 850 mV @ 8 A 710 mV @ 3 A 810 mV @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 19 ns 10 ns 12 ns 12 ns
Current - Reverse Leakage @ Vr 4 µA @ 100 V 500 nA @ 100 V 2.5 µA @ 100 V 2.5 µA @ 100 V
Capacitance @ Vr, F 680pF @ 1V, 1MHz 97pF @ 10V, 1MHz 410pF @ 1V, 1MHz 410pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-277, 3-PowerDFN TO-277, 3-PowerDFN TO-277, 3-PowerDFN TO-277, 3-PowerDFN
Supplier Device Package CFP15B CFP15B CFP15B CFP15B
Operating Temperature - Junction 175°C 175°C 175°C 175°C

Related Product By Categories

CMR1-04M TR13 PBFREE
CMR1-04M TR13 PBFREE
Central Semiconductor Corp
DIODE GEN PURP 400V 1A SMA
ES3J V7G
ES3J V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
SM4005-CT
SM4005-CT
Diotec Semiconductor
CUT-TAPE VERSION. STANDARD RECO
SE50PAJHM3/I
SE50PAJHM3/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 5A DO221BC
STPS3L60QRL
STPS3L60QRL
STMicroelectronics
DIODE SCHOTTKY 60V 3A DO15
ES1J-13-F
ES1J-13-F
Diodes Incorporated
SUPERFAST RECOVERY RECTIFIER SMA
SBM340-13-F
SBM340-13-F
Diodes Incorporated
DIODE SCHOTTKY 40V 3A POWERMITE3
ISL9R8120P2
ISL9R8120P2
onsemi
DIODE GEN PURP 1.2KV 8A TO220-2L
CDBFR0230-HF
CDBFR0230-HF
Comchip Technology
DIODE SCHOTTKY 30V 200MA 1005
EGP10F-M3/54
EGP10F-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 1A DO204AL
MBRS120T3H
MBRS120T3H
onsemi
DIODE SCHOTTKY
RBS2MM40CTR
RBS2MM40CTR
Rohm Semiconductor
RBS2LAM40C IS SUPER LOW VF

Related Product By Brand

PESD4V0W1BCSFYL
PESD4V0W1BCSFYL
Nexperia USA Inc.
TVS DIODE 4VWM 5.1VC DSN0603-2
PMEG2010AEB,115
PMEG2010AEB,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD523
BAS16QAZ
BAS16QAZ
Nexperia USA Inc.
DIODE GP 100V 290MA DFN1010D-3
BZX8450-C12VL
BZX8450-C12VL
Nexperia USA Inc.
BZX8450-C12/SOT23/TO-236AB
2PC4081S,115
2PC4081S,115
Nexperia USA Inc.
TRANS NPN 50V 0.15A SOT323
BCP69-25,115
BCP69-25,115
Nexperia USA Inc.
TRANS PNP 20V 2A SOT223
PBRN123ET,215
PBRN123ET,215
Nexperia USA Inc.
TRANS PREBIAS NPN 40V TO236AB
BUK663R5-55C,118
BUK663R5-55C,118
Nexperia USA Inc.
MOSFET N-CH 55V 120A D2PAK
74HC107D,653
74HC107D,653
Nexperia USA Inc.
IC FF JK TYPE DUAL 1BIT 14SO
74LVC1G06GS
74LVC1G06GS
Nexperia USA Inc.
NOW NEXPERIA 74LVC1G06GS - INVER
74HC157D,653
74HC157D,653
Nexperia USA Inc.
IC MULTIPLEXER 4 X 2:1 16SO
PMPB40ENAX
PMPB40ENAX
Nexperia USA Inc.
PMPB40ENA - 60 V, N-CHANNEL TREN