PMEG100T050ELPE-QZ
  • Share:

Nexperia USA Inc. PMEG100T050ELPE-QZ

Manufacturer No:
PMEG100T050ELPE-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMEG100T050ELPE-QZ Datasheet
ECAD Model:
-
Description:
PMEG100T050ELPE-Q/SOT1289B/CFP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):5A
Voltage - Forward (Vf) (Max) @ If:810 mV @ 5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):12 ns
Current - Reverse Leakage @ Vr:2.5 µA @ 100 V
Capacitance @ Vr, F:410pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-277, 3-PowerDFN
Supplier Device Package:CFP15B
Operating Temperature - Junction:175°C
0 Remaining View Similar

In Stock

$0.63
745

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG100T050ELPE-QZ PMEG100T080ELPE-QZ   PMEG100T030ELPE-QZ  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V
Current - Average Rectified (Io) 5A 8A 3A
Voltage - Forward (Vf) (Max) @ If 810 mV @ 5 A 810 mV @ 8 A 710 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 12 ns 19 ns 12 ns
Current - Reverse Leakage @ Vr 2.5 µA @ 100 V 4 µA @ 100 V 2.5 µA @ 100 V
Capacitance @ Vr, F 410pF @ 1V, 1MHz 680pF @ 1V, 1MHz 410pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-277, 3-PowerDFN TO-277, 3-PowerDFN TO-277, 3-PowerDFN
Supplier Device Package CFP15B CFP15B CFP15B
Operating Temperature - Junction 175°C 175°C 175°C

Related Product By Categories

TRS12E65F,S1Q
TRS12E65F,S1Q
Toshiba Semiconductor and Storage
DODE SCHOTTKY 650V TO220
MB510_R1_00001
MB510_R1_00001
Panjit International Inc.
SMC, SKY
V20PW15-M3/I
V20PW15-M3/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 150V 20A SLIMDPAK
MURS340S-E3/52T
MURS340S-E3/52T
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 3A DO214AB
ES3JBH
ES3JBH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AA
1N4006-E3/73
1N4006-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 1A DO204AL
1N4448,113
1N4448,113
NXP USA Inc.
DIODE GEN PURP 100V 200MA ALF2
15ETH06
15ETH06
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 15A TO220AC
RS1GL MTG
RS1GL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 800MA SUBSMA
MUR120SHR5G
MUR120SHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AA
HER105G-AP
HER105G-AP
Micro Commercial Co
DIODE GPP HE 1A DO-41
RB451UMTL
RB451UMTL
Rohm Semiconductor
RB451UM IS SCHOTTKY BARRIER DIOD

Related Product By Brand

BZX384-B75,115
BZX384-B75,115
Nexperia USA Inc.
DIODE ZENER 75V 300MW SOD323
NMB2227AH
NMB2227AH
Nexperia USA Inc.
NMB2227A/SOT457/SC-74
PSMN2R0-60ES
PSMN2R0-60ES
Nexperia USA Inc.
ELEMENT, NCHANNEL, SILICON, MOSF
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
74LVC1G97GV,125
74LVC1G97GV,125
Nexperia USA Inc.
IC CONFIG MULTI FUNC GATE 6TSOP
74LVC2G08DP-Q100H
74LVC2G08DP-Q100H
Nexperia USA Inc.
IC GATE AND 2CH 2-INP 8TSSOP
74AHC04PW,112
74AHC04PW,112
Nexperia USA Inc.
NEXPERIA 74AHC04PW - INVERTER, A
74AUP2G02GN,115
74AUP2G02GN,115
Nexperia USA Inc.
74AUP2G02 - LOW-POWER DUAL 2-INP
74HC2G32DP-Q100H
74HC2G32DP-Q100H
Nexperia USA Inc.
IC GATE OR 2CH 2-INP 8TSSOP
74HC157PW,118
74HC157PW,118
Nexperia USA Inc.
IC MULTIPLEXER 4 X 2:1 16TSSOP
74HCT251D,652
74HCT251D,652
Nexperia USA Inc.
IC MULTIPLEXER 1 X 8:1 16SO
74HC139D-Q100J
74HC139D-Q100J
Nexperia USA Inc.
IC DECODER/DEMUX 1 X 2:4 16SO