PMEG10020ELR-QX
  • Share:

Nexperia USA Inc. PMEG10020ELR-QX

Manufacturer No:
PMEG10020ELR-QX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMEG10020ELR-QX Datasheet
ECAD Model:
-
Description:
SCHOTTKYS IN CFP PACKAGES
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:830 mV @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):3.7 ns
Current - Reverse Leakage @ Vr:150 nA @ 100 V
Capacitance @ Vr, F:70pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-123W
Supplier Device Package:SOD-123W
Operating Temperature - Junction:175°C
0 Remaining View Similar

In Stock

$0.11
6,053

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG10020ELR-QX PMEG100T20ELR-QX   PMEG10010ELR-QX   PMEG10020AELR-QX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V 100 V 100 V
Current - Average Rectified (Io) 2A 2A 1A 2A
Voltage - Forward (Vf) (Max) @ If 830 mV @ 2 A 800 mV @ 2 A 770 mV @ 1 A 770 mV @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 3.7 ns 12 ns 3.7 ns 5 ns
Current - Reverse Leakage @ Vr 150 nA @ 100 V 1.25 µA @ 100 V 150 nA @ 100 V 300 nA @ 100 V
Capacitance @ Vr, F 70pF @ 1V, 1MHz 200pF @ 1V, 1MHz 70pF @ 1V, 1MHz 135pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOD-123W SOD-123W SOD-123W SOD-123W
Supplier Device Package SOD-123W SOD-123W SOD-123W SOD-123W
Operating Temperature - Junction 175°C 175°C 175°C 175°C

Related Product By Categories

1N4001B-G
1N4001B-G
Comchip Technology
DIODE GEN PURP 50V 1A DO41
GI756-E3/73
GI756-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 6A P600
VS-HFA15TB60-M3
VS-HFA15TB60-M3
Vishay General Semiconductor - Diodes Division
DIODE FRED 600V 15A TO220AC
BAS16WS-G3-08
BAS16WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
U3B-E3/9AT
U3B-E3/9AT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 2A DO214AB
1N5620US
1N5620US
Microchip Technology
DIODE GEN PURP 800V 1A D5A
B170B-13
B170B-13
Diodes Incorporated
DIODE SCHOTTKY 70V 1A SMB
STTA2006PI
STTA2006PI
STMicroelectronics
DIODE GEN PURP 600V 20A DOP3I
1N5614GPHE3/54
1N5614GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
UG2G-E3/54
UG2G-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 2A DO204AC
SFA1001GHC0G
SFA1001GHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 10A TO220AC
JANKCA1N5296
JANKCA1N5296
Microchip Technology
CURRENT REGULATOR

Related Product By Brand

PESD2CANFD27L-UX
PESD2CANFD27L-UX
Nexperia USA Inc.
TVS DIODE 27VWM SC70
BAV103,135
BAV103,135
Nexperia USA Inc.
DIODE GEN PURP 200V 250MA LLDS
BZV55-C5V1,135
BZV55-C5V1,135
Nexperia USA Inc.
DIODE ZENER 5.1V 500MW LLDS
NMB2227AZ
NMB2227AZ
Nexperia USA Inc.
NMB2227A/SOT457/SC-74
PMBT4401,235
PMBT4401,235
Nexperia USA Inc.
TRANS NPN 40V 0.6A TO236AB
PDTA123JM,315
PDTA123JM,315
Nexperia USA Inc.
TRANS PREBIAS PNP 50V DFN1006-3
PMPB10XNX
PMPB10XNX
Nexperia USA Inc.
MOSFET N-CH 30V 9.5A DFN2020MD-6
PSMNR90-30BL,118
PSMNR90-30BL,118
Nexperia USA Inc.
MOSFET N-CH 30V 120A D2PAK
BUK9212-55B,118
BUK9212-55B,118
Nexperia USA Inc.
MOSFET N-CH 55V 75A DPAK
74AHCT3G14GD-Q100H
74AHCT3G14GD-Q100H
Nexperia USA Inc.
IC INVERT SCHMITT 3CH 3-IN 8XSON
NPIC6C4894D-Q100Y
NPIC6C4894D-Q100Y
Nexperia USA Inc.
IC SHIFT REGISTER 12BIT SO20
74ALVC164245DGG,11
74ALVC164245DGG,11
Nexperia USA Inc.
IC TRNSLTR BIDIRECTIONAL 48TSSOP