PMEG050V030EPDZ
  • Share:

Nexperia USA Inc. PMEG050V030EPDZ

Manufacturer No:
PMEG050V030EPDZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMEG050V030EPDZ Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 50V 3A CFP15
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):3A (DC)
Voltage - Forward (Vf) (Max) @ If:530 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):12 ns
Current - Reverse Leakage @ Vr:100 µA @ 50 V
Capacitance @ Vr, F:350pF @ 1V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-277, 3-PowerDFN
Supplier Device Package:CFP15
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.57
1,105

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG050V030EPDZ PMEG060V030EPDZ   PMEG030V030EPDZ   PMEG040V030EPDZ  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 50 V 60 V 30 V 40 V
Current - Average Rectified (Io) 3A (DC) 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 530 mV @ 3 A 530 mV @ 3 A 450 mV @ 3 A 490 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 12 ns 12 ns 12 ns 13 ns
Current - Reverse Leakage @ Vr 100 µA @ 50 V 200 µA @ 60 V 150 µA @ 30 V 120 µA @ 40 V
Capacitance @ Vr, F 350pF @ 1V, 1MHz 350pF @ 1V, 1MHz 495pF @ 1V, 1MHz 395pF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-277, 3-PowerDFN TO-277, 3-PowerDFN TO-277, 3-PowerDFN TO-277, 3-PowerDFN
Supplier Device Package CFP15 CFP15 CFP15 CFP15
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

1N457
1N457
onsemi
DIODE GEN PURP 70V 200MA DO35
MSS1P5HM3_A/H
MSS1P5HM3_A/H
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 1A MICROSMP
MMBD4448_R1_00001
MMBD4448_R1_00001
Panjit International Inc.
SURFACE MOUNT SWITCHING DIODE
NTSB20U100CTT4G
NTSB20U100CTT4G
onsemi
RECTIFIER DIODE, SCHOTTKY, 1 PHA
VT2080S-E3/4W
VT2080S-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20A 80V TO-220AB
G3S12010M
G3S12010M
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 10A 2-P
BAW62_T50A
BAW62_T50A
onsemi
DIODE GEN PURP 75V 300MA DO35
ES1HM2G
ES1HM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 1A DO214AC
SK83C M6G
SK83C M6G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 8A DO214AB
SFAF1002G C0G
SFAF1002G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 10A ITO220AC
MMBD4448Q-7-F
MMBD4448Q-7-F
Diodes Incorporated
DIODE GEN PURP 75V 250MA SOT23-3
SK85C
SK85C
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 8A 50V DO-214AB

Related Product By Brand

PESD4USB5B-TBSX
PESD4USB5B-TBSX
Nexperia USA Inc.
PESD4USB5B-TBS/SOT1176D/DFN251
MM3Z7V5T1GX
MM3Z7V5T1GX
Nexperia USA Inc.
VOLTAGE REGULATOR DIODES
BZX84-C7V5/DG/B3,2
BZX84-C7V5/DG/B3,2
Nexperia USA Inc.
DIODE ZENER 7.45V 250MW TO236AB
BCP53TF
BCP53TF
Nexperia USA Inc.
BCP53T/SOT223/SC-73
PMSTA92,115
PMSTA92,115
Nexperia USA Inc.
TRANS PNP 300V 0.1A SOT323
PSMN017-80PS,127
PSMN017-80PS,127
Nexperia USA Inc.
MOSFET N-CH 80V 50A TO220AB
PSMN1R4-40YLDX
PSMN1R4-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
PSMN022-30BL,118
PSMN022-30BL,118
Nexperia USA Inc.
MOSFET N-CH 30V 30A D2PAK
74HCT4851PW-Q100,1
74HCT4851PW-Q100,1
Nexperia USA Inc.
IC MUX/DEMUX 8CH ANLG 16TSSOP
74ALVC16836ADGG:11
74ALVC16836ADGG:11
Nexperia USA Inc.
IC BUF NON-INVERT 3.6V 56TSSOP
74LVC16245AEVE
74LVC16245AEVE
Nexperia USA Inc.
IC TXRX NON-INVERT 3.6V 56VFBGA
74LVC30ABQX
74LVC30ABQX
Nexperia USA Inc.
IC GATE NAND 1CH 8-INP 14DHVQFN