PMEG050T150EPDAZ
  • Share:

Nexperia USA Inc. PMEG050T150EPDAZ

Manufacturer No:
PMEG050T150EPDAZ
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Datasheet:
PMEG050T150EPDAZ Datasheet
ECAD Model:
-
Description:
PMEG050T150EPD - 50V, 15 A LOW V
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):15A
Voltage - Forward (Vf) (Max) @ If:550 mV @ 15 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:100 µA @ 50 V
Capacitance @ Vr, F:800pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-277, 3-PowerDFN
Supplier Device Package:CFP15
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$0.32
1,795

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMEG050T150EPDAZ PMEG050T150EPDZ   PMEG050V150EPDAZ   PMEG050T150EIPDAZ  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Diode Type Schottky Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 50 V 50 V 50 V 50 V
Current - Average Rectified (Io) 15A 15A 15A 15A (DC)
Voltage - Forward (Vf) (Max) @ If 550 mV @ 15 A 550 mV @ 15 A 500 mV @ 15 A 570 mV @ 15 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns 60 ns 20 ns 49 ns
Current - Reverse Leakage @ Vr 100 µA @ 50 V 100 µA @ 50 V 1 mA @ 50 V 200 µA @ 50 V
Capacitance @ Vr, F 800pF @ 10V, 1MHz 800pF @ 10V, 1MHz 570pF @ 10V, 1MHz 1.37nF @ 1V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-277, 3-PowerDFN TO-277, 3-PowerDFN TO-277, 3-PowerDFN TO-277, 3-PowerDFN
Supplier Device Package CFP15 CFP15 CFP15 CFP15
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

RS2DA R3G
RS2DA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A DO214AC
PMEG3002AESFCYL
PMEG3002AESFCYL
Nexperia USA Inc.
PMEG3002AESF - 30V, 0.2A LOW VF
STPS30SM120SR
STPS30SM120SR
STMicroelectronics
DIODE SCHOTTKY 120V 30A I2PAK
FES16BT-E3/45
FES16BT-E3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 16A TO220AC
BAS381-TR3
BAS381-TR3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 30MA MICROMLF
FFSP1265A
FFSP1265A
onsemi
DIODE SCHOTTKY 650V 15A TO220-2L
BYM07-300HE3/83
BYM07-300HE3/83
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 500MA DO213
DB2J31000L
DB2J31000L
Panasonic Electronic Components
DIODE SCHOTTKY 30V 200MA SMINI2
MSS1P5HM3/89A
MSS1P5HM3/89A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 1A 50V MICROSMP
RS3KHM6G
RS3KHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO214AB
S1AL MQG
S1AL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
SF54-AP
SF54-AP
Micro Commercial Co
DIODE GPP HE 5A DO-201AD

Related Product By Brand

SZMM5Z12VT5GF
SZMM5Z12VT5GF
Nexperia USA Inc.
SZMM5Z12VT5G/SOD523/SC-79
BZX8450-C10VL
BZX8450-C10VL
Nexperia USA Inc.
BZX8450-C10/SOT23/TO-236AB
BZX38450-C2V7-QX
BZX38450-C2V7-QX
Nexperia USA Inc.
BZX38450-C2V7-Q/SOD323/SOD2
PDZ5.1BZ
PDZ5.1BZ
Nexperia USA Inc.
DIODE ZENER 5.2V 400MW SOD323
BZX84W-B22X
BZX84W-B22X
Nexperia USA Inc.
DIODE ZENER 22V 275MW SOT323
BCM846BSX
BCM846BSX
Nexperia USA Inc.
TRANS 2NPN 65V 0.1A SC-88
BCX70H,215
BCX70H,215
Nexperia USA Inc.
TRANS NPN 45V 0.1A TO236AB
74HCT365D-Q100,118
74HCT365D-Q100,118
Nexperia USA Inc.
IC BUFFER NON-INVERT 5.5V 16SO
74LVC2G00GF,115
74LVC2G00GF,115
Nexperia USA Inc.
IC GATE NAND 2CH 2-INP 8XSON
74HC595D,118
74HC595D,118
Nexperia USA Inc.
IC SHIFT REGISTER 8BIT 16SOIC
74LV1T04GX,125
74LV1T04GX,125
Nexperia USA Inc.
SINGLE SUPPLY TRANSLATING INVERT
74AXP1G97GM,125
74AXP1G97GM,125
Nexperia USA Inc.
NOW NEXPERIA 74AXP1G97GM - MAJOR