Nexperia USA Inc.-PMDT290UCEH - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	N and P-Channel Complementary
FET Feature:	Standard
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	800mA (Ta), 550mA (Ta)
Rds On (Max) @ Id, Vgs:	380mOhm @ 500mA, 4.5V, 850mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id:	950mV @ 250µA, 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	680pC @ 4.5V, 1.14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	83pF @ 10V, 87pF @ 10V
Power - Max:	330mW (Ta), 1.09W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-666

Nexperia USA Inc. PMDT290UCEH