Nexperia USA Inc.-PMCXB1000UEZ - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	N and P-Channel Complementary
FET Feature:	Standard
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	590mA (Ta), 410mA (Ta)
Rds On (Max) @ Id, Vgs:	670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V
Vgs(th) (Max) @ Id:	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	1.05nC @ 4.5V, 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	30.3pF @ 15V, 43.2pF @ 15V
Power - Max:	285mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-XFDFN Exposed Pad
Supplier Device Package:	DFN1010B-6

Nexperia USA Inc. PMCXB1000UEZ