Nexperia USA Inc.-PMCPB5530X,115 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	N and P-Channel
FET Feature:	-
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	4A (Ta), 3.4A (Ta)
Rds On (Max) @ Id, Vgs:	34mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	21.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	660pF @ 10V
Power - Max:	490mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-UFDFN Exposed Pad
Supplier Device Package:	6-HUSON (2x2)

Nexperia USA Inc. PMCPB5530X,115