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| Part Number | PMCM6501VNEZ | PMCM650VNEZ | PMCM6501VPEZ | PMCM6501UNEZ |
|---|---|---|---|---|
| Manufacturer | Nexperia USA Inc. | NXP USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. |
| Product Status | Active | Obsolete | Active | Active |
| FET Type | N-Channel | N-Channel | P-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12 V | 12 V | 12 V | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Ta) | 6.4A (Ta) | 6.2A (Ta) | 8.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V | 4.5V | 1.8V, 4.5V | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 3A, 4.5V | 25mOhm @ 3A, 4.5V | 25mOhm @ 3A, 4.5V | 21mOhm @ 3A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA | 900mV @ 250µA | 900mV @ 250µA | 0.9V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V | 15.4 nC @ 4.5 V | 29.4 nC @ 4.5 V | 6.2 nC @ 4.5 V |
| Vgs (Max) | ±8V | ±8V | ±8V | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 6 V | 1060 pF @ 6 V | 1400 pF @ 6 V | 105 pF @ 10 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 556mW (Ta), 12.5W (Tc) | 556mW (Ta), 12.5W (Tc) | 556mW (Ta), 12.5W (Tc) | 400mW |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | 6-WLCSP (1.48x0.98) | 6-WLCSP (1.48x0.98) | 6-WLCSP (1.48x0.98) | 6-WLCSP (1.48x0.98) |
| Package / Case | 6-XFBGA, WLCSP | 6-XFBGA, WLCSP | 6-XFBGA, WLCSP | 6-XFBGA, WLCSP |
