PMCM6501UPEZ
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Nexperia USA Inc. PMCM6501UPEZ

Manufacturer No:
PMCM6501UPEZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMCM6501UPEZ Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 6WLCSP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:7.3A (Tj)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:19.1 nC @ 4.5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):556mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WLCSP (1.48x0.98)
Package / Case:6-XFBGA, WLCSP
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Similar Products

Part Number PMCM6501UPEZ PMCM6501VPEZ   PMCM6501UNEZ  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type P-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 12 V 20 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tj) 6.2A (Ta) 8.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 1.8V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs - 25mOhm @ 3A, 4.5V 21mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id - 900mV @ 250µA 0.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.1 nC @ 4.5 V 29.4 nC @ 4.5 V 6.2 nC @ 4.5 V
Vgs (Max) - ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds - 1400 pF @ 6 V 105 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 556mW 556mW (Ta), 12.5W (Tc) 400mW
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-WLCSP (1.48x0.98) 6-WLCSP (1.48x0.98) 6-WLCSP (1.48x0.98)
Package / Case 6-XFBGA, WLCSP 6-XFBGA, WLCSP 6-XFBGA, WLCSP

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