PMCM4402UPEZ
  • Share:

Nexperia USA Inc. PMCM4402UPEZ

Manufacturer No:
PMCM4402UPEZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PMCM4402UPEZ Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 4WLCSP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Tj)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:6.2 nC @ 4.5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):400mW
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-WLCSP (0.78x0.78)
Package / Case:4-XFBGA, WLCSP
0 Remaining View Similar

In Stock

$0.46
247

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMCM4402UPEZ PMCM4401UPEZ  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Tj) 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs - 95mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id - 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 4.5 V 10 nC @ 4.5 V
Vgs (Max) - ±8V
Input Capacitance (Ciss) (Max) @ Vds - 420 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 400mW 400mW (Ta), 12.5W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 4-WLCSP (0.78x0.78) 4-WLCSP (0.78x0.78)
Package / Case 4-XFBGA, WLCSP 4-XFBGA, WLCSP

Related Product By Categories

STD10LN80K5
STD10LN80K5
STMicroelectronics
MOSFET N-CHANNEL 800V 8A DPAK
C3M0120090J-TR
C3M0120090J-TR
Wolfspeed, Inc.
SICFET N-CH 900V 22A D2PAK-7
TPH3206PD
TPH3206PD
Transphorm
GANFET N-CH 600V 17A TO220AB
NTNS3190NZT5G
NTNS3190NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
IV1Q12160T4
IV1Q12160T4
Inventchip
SIC MOSFET, 1200V 160MOHM, TO-24
IXFT220N20X3HV
IXFT220N20X3HV
IXYS
MOSFET N-CH 200V 220A TO268HV
SQA405EJ-T1_GE3
SQA405EJ-T1_GE3
Vishay Siliconix
MOSFET P-CH 40V 10A PPAK SC70-6
NTMTS0D6N04CTXG
NTMTS0D6N04CTXG
onsemi
MOSFET N-CH 40V 533A
DMT15H053SSS-13
DMT15H053SSS-13
Diodes Incorporated
MOSFET N-CH 150V 5.2A/15A 8SO
DMTH10H005SCT
DMTH10H005SCT
Diodes Incorporated
MOSFET N-CH 100V 140A TO220AB
UPA2738GR-E2-AX
UPA2738GR-E2-AX
Renesas Electronics America Inc
MOSFET P-CH 30V 10A 8SOP
SCT3080KLHRC11
SCT3080KLHRC11
Rohm Semiconductor
SICFET N-CH 1200V 31A TO247N

Related Product By Brand

PESD5V0L1ULD,315
PESD5V0L1ULD,315
Nexperia USA Inc.
NEXPERIA PESD5V0L1ULD - TRANS VO
PESD3V3W1BCSFYL
PESD3V3W1BCSFYL
Nexperia USA Inc.
TVS DIODE 3.3VWM 5.1VC DSN0603-2
BZX8450-C12-QVL
BZX8450-C12-QVL
Nexperia USA Inc.
BZX8450-C12-Q/SOT23/TO-236AB
PMBT3906,235
PMBT3906,235
Nexperia USA Inc.
TRANS PNP 40V 0.2A TO236AB
BF550,215
BF550,215
Nexperia USA Inc.
TRANS PNP 40V 0.025A TO236AB
PBSS5350X,135
PBSS5350X,135
Nexperia USA Inc.
TRANS PNP 50V 3A SOT89
BC859BW,135
BC859BW,135
Nexperia USA Inc.
TRANS PNP 30V 0.1A SOT323
74LVT125DB,112-NEX
74LVT125DB,112-NEX
Nexperia USA Inc.
IC BUFFER NON-INVERT 3.6V 14SSOP
74AHC30PW,118
74AHC30PW,118
Nexperia USA Inc.
IC GATE NAND 1CH 8-INP 14TSSOP
74LVC04ADB,112-NEX
74LVC04ADB,112-NEX
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14SSOP
74LV165APW,118
74LV165APW,118
Nexperia USA Inc.
IC 8BIT SHIFT REGISTER 16TSSOP
74AUP1T97GN,132
74AUP1T97GN,132
Nexperia USA Inc.
IC LP CONFIG GATE V-XLATR 6XSON