Nexperia USA Inc.-PMBTA06-QR - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	500 mA
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 100mA, 1V
Power - Max:	250 mW
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB

Nexperia USA Inc. PMBTA06-QR