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PHKD6N02LT,518
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Nexperia USA Inc. PHKD6N02LT,518

Manufacturer No:
PHKD6N02LT,518
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PHKD6N02LT,518 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 20V 10.9A SOT96-1
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:10.9A
Rds On (Max) @ Id, Vgs:20mOhm @ 3A, 5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:950pF @ 10V
Power - Max:4.17W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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$0.28
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