Nexperia USA Inc.-PHKD3NQ10T,518 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	3A
Rds On (Max) @ Id, Vgs:	90mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	633pF @ 20V
Power - Max:	2W
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

Nexperia USA Inc. PHKD3NQ10T,518