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PHKD3NQ10T,518
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Nexperia USA Inc. PHKD3NQ10T,518

Manufacturer No:
PHKD3NQ10T,518
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PHKD3NQ10T,518 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 100V 3A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:3A
Rds On (Max) @ Id, Vgs:90mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:633pF @ 20V
Power - Max:2W
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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In Stock

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