Nexperia USA Inc.-PHK04P02T,518 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	16 V
Current - Continuous Drain (Id) @ 25°C:	4.66A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 10V
Rds On (Max) @ Id, Vgs:	120mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:	600mV @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs:	7.2 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	528 pF @ 12.8 V
FET Feature:	-
Power Dissipation (Max):	5W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SO
Package / Case:	8-SOIC (0.154", 3.90mm Width)

Nexperia USA Inc. PHK04P02T,518