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Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
PHD9NQ20T,118
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Nexperia USA Inc. PHD9NQ20T,118
Manufacturer No:
PHD9NQ20T,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PHD9NQ20T,118 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 8.7A DPAK
Delivery:
Payment:
Product Attributes
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
959 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
88W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
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UnitPrice:
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Quantity:
526
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