PHB27NQ10T,118
  • Share:

Nexperia USA Inc. PHB27NQ10T,118

Manufacturer No:
PHB27NQ10T,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PHB27NQ10T,118 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 28A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:50mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1240 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):107W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.46
61

Please send RFQ , we will respond immediately.

Similar Products

Part Number PHB27NQ10T,118 PHB47NQ10T,118  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc) 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 14A, 10V 28mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 66 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1240 pF @ 25 V 3100 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 107W (Tc) 166W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

MGSF2N02ELT1G
MGSF2N02ELT1G
onsemi
MOSFET N-CH 20V 2.8A SOT23-3
IRFBC20PBF
IRFBC20PBF
Vishay Siliconix
MOSFET N-CH 600V 2.2A TO220AB
FDS3672
FDS3672
onsemi
MOSFET N-CH 100V 7.5A 8SOIC
PMZ370UNE315
PMZ370UNE315
NXP USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
IPW65R190CFD7AXKSA1
IPW65R190CFD7AXKSA1
Infineon Technologies
MOSFET N-CH 650V 14A TO247-3
SPA11N60CFDXKSA1
SPA11N60CFDXKSA1
Infineon Technologies
MOSFET N-CH 600V 11A TO220-3
IRF730STRL
IRF730STRL
Vishay Siliconix
MOSFET N-CH 400V 5.5A D2PAK
IPD06N03LB G
IPD06N03LB G
Infineon Technologies
MOSFET N-CH 30V 50A TO252-3
NTY100N10
NTY100N10
onsemi
MOSFET N-CH 100V 123A TO264
APT5010JFLL
APT5010JFLL
Microchip Technology
MOSFET N-CH 500V 41A ISOTOP
IXFE39N90
IXFE39N90
IXYS
MOSFET N-CH 900V 34A SOT227B
IPP45N06S4L08AKSA1
IPP45N06S4L08AKSA1
Infineon Technologies
MOSFET N-CH 60V 45A TO220-3

Related Product By Brand

PESD1FLEX,215
PESD1FLEX,215
Nexperia USA Inc.
TVS DIODE 24VWM 70VC TO236AB
BZB84-C3V9,215
BZB84-C3V9,215
Nexperia USA Inc.
DIODE ZENER ARRAY 3.9V SOT23
BZX8850S-C43YL
BZX8850S-C43YL
Nexperia USA Inc.
BZX8850S-C43/SOD882BD/XSON2
BZT52-C4V7J
BZT52-C4V7J
Nexperia USA Inc.
DIODE ZENER 4.7V 350MW SOD123
BZX84J-C5V1/DG/B2,
BZX84J-C5V1/DG/B2,
Nexperia USA Inc.
DIODE ZENER 5.1V 550MW SC90
BC807-25,215
BC807-25,215
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB
PZTA42/ZLX
PZTA42/ZLX
Nexperia USA Inc.
TRANS NPN 300V 0.1A SOT223
PDTC143ZQCZ
PDTC143ZQCZ
Nexperia USA Inc.
PDTC143ZQC/SOT8009/DFN1412D-3
PSMN2R6-30YLC,115
PSMN2R6-30YLC,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
74LVC1G66GF,132
74LVC1G66GF,132
Nexperia USA Inc.
IC SWITCH SPST 6XSON
74LVC377DB,112
74LVC377DB,112
Nexperia USA Inc.
IC FF D-TYPE SNGL 8BIT 20SSOP
74AXP1G08GXH
74AXP1G08GXH
Nexperia USA Inc.
NEXPERIA 74AXP1G08 - LOW-POWER 2