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| Part Number | PDTD143EQAZ | PDTD143XQAZ | PDTD113EQAZ | PDTD123EQAZ |
|---|---|---|---|---|
| Manufacturer | Nexperia USA Inc. | Nexperia USA Inc. | NXP Semiconductors | Nexperia USA Inc. |
| Product Status | Active | Active | Active | Active |
| Transistor Type | NPN - Pre-Biased | - | - | - |
| Current - Collector (Ic) (Max) | 500 mA | - | - | - |
| Voltage - Collector Emitter Breakdown (Max) | 50 V | - | - | - |
| Resistor - Base (R1) | 4.7 kOhms | - | - | - |
| Resistor - Emitter Base (R2) | 4.7 kOhms | - | - | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 50mA, 5V | - | - | - |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 2.5mA, 50mA | - | - | - |
| Current - Collector Cutoff (Max) | 500nA | - | - | - |
| Frequency - Transition | 210 MHz | - | - | - |
| Power - Max | 325 mW | - | - | - |
| Mounting Type | Surface Mount | - | - | - |
| Package / Case | 3-XDFN Exposed Pad | - | - | - |
| Supplier Device Package | DFN1010D-3 | - | - | - |
