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| Part Number | PDTD123EQAZ | PDTD123YQAZ | PDTD143EQAZ | PDTD113EQAZ |
|---|---|---|---|---|
| Manufacturer | Nexperia USA Inc. | NXP Semiconductors | Nexperia USA Inc. | NXP Semiconductors |
| Product Status | Active | Active | Active | Active |
| Transistor Type | - | - | NPN - Pre-Biased | - |
| Current - Collector (Ic) (Max) | - | - | 500 mA | - |
| Voltage - Collector Emitter Breakdown (Max) | - | - | 50 V | - |
| Resistor - Base (R1) | - | - | 4.7 kOhms | - |
| Resistor - Emitter Base (R2) | - | - | 4.7 kOhms | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - | - | 60 @ 50mA, 5V | - |
| Vce Saturation (Max) @ Ib, Ic | - | - | 100mV @ 2.5mA, 50mA | - |
| Current - Collector Cutoff (Max) | - | - | 500nA | - |
| Frequency - Transition | - | - | 210 MHz | - |
| Power - Max | - | - | 325 mW | - |
| Mounting Type | - | - | Surface Mount | - |
| Package / Case | - | - | 3-XDFN Exposed Pad | - |
| Supplier Device Package | - | - | DFN1010D-3 | - |
