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Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Single, Pre-Biased
PDTD113ZTVL
PDTD113ZTVL Image
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Nexperia USA Inc. PDTD113ZTVL
Manufacturer No:
PDTD113ZTVL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PDTD113ZTVL Datasheet
ECAD Model:
-
Description:
PDTD113ZT/SOT23/TO-236AB
Delivery:
Payment:
Product Attributes
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
500 mA
Voltage - Collector Emitter Breakdown (Max):
-
Resistor - Base (R1):
1 kOhms
Resistor - Emitter Base (R2):
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):
500nA
Frequency - Transition:
-
Power - Max:
-
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
TO-236AB
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UnitPrice:
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Quantity:
1,123
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