PDTC123TT,235
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Nexperia USA Inc. PDTC123TT,235

Manufacturer No:
PDTC123TT,235
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PDTC123TT,235 Datasheet
ECAD Model:
-
Description:
TRANS PREBIAS NPN 250MW TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number PDTC123TT,235 PDTC143TT,235   PDTC123JT,235   PDTC123TT,215  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V
Resistor - Base (R1) 2.2 kOhms 4.7 kOhms 2.2 kOhms 2.2 kOhms
Resistor - Emitter Base (R2) - - 47 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA, 5V 200 @ 1mA, 5V 100 @ 10mA, 5V 30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA
Frequency - Transition - - - -
Power - Max 250 mW 250 mW 250 mW 250 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB SOT-23

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