PDTC114YQBZ
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Nexperia USA Inc. PDTC114YQBZ

Manufacturer No:
PDTC114YQBZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PDTC114YQBZ Datasheet
ECAD Model:
-
Description:
PDTC114YQB/SOT8015/DFN1110D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA
Frequency - Transition:180 MHz
Power - Max:340 mW
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
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Similar Products

Part Number PDTC114YQBZ PDTC114YQCZ   PDTC114EQBZ   PDTC114YQAZ  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete Active Active
Transistor Type PNP - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V -
Resistor - Base (R1) 10 kOhms 10 kOhms 10 kOhms -
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms 10 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA, 5V 100 @ 5mA, 5V 30 @ 5mA, 5V -
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA 100mV @ 500µA, 10mA -
Current - Collector Cutoff (Max) 100nA 100nA 100nA -
Frequency - Transition 180 MHz 230 MHz 180 MHz -
Power - Max 340 mW 360 mW 340 mW -
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount, Wettable Flank -
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad -
Supplier Device Package DFN1110D-3 DFN1412D-3 DFN1110D-3 -

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