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PDTC114ET-QR
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Nexperia USA Inc. PDTC114ET-QR

Manufacturer No:
PDTC114ET-QR
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Datasheet:
PDTC114ET-QR Datasheet
ECAD Model:
-
Description:
TRANS PREBIAS NPN/PNP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:230 MHz
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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