PDTC114EQAZ
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Nexperia USA Inc. PDTC114EQAZ

Manufacturer No:
PDTC114EQAZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PDTC114EQAZ Datasheet
ECAD Model:
-
Description:
TRANS PREBIAS NPN 3DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:230 MHz
Power - Max:280 mW
Mounting Type:Surface Mount
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1010D-3
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Similar Products

Part Number PDTC114EQAZ PDTC114EQBZ   PDTC114EQCZ   PDTC114YQAZ   PDTC124EQAZ   PDTB114EQAZ  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Obsolete Active Active Active
Transistor Type NPN - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased - NPN - Pre-Biased -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA - 100 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V - 50 V -
Resistor - Base (R1) 10 kOhms 10 kOhms 10 kOhms - 22 kOhms -
Resistor - Emitter Base (R2) 10 kOhms 10 kOhms 10 kOhms - 22 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V 30 @ 5mA, 5V 30 @ 5mA, 5V - 60 @ 5mA, 5V -
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 100mV @ 500µA, 10mA 100mV @ 500µA, 10mA - 150mV @ 500µA, 10mA -
Current - Collector Cutoff (Max) 1µA 100nA 100nA - 1µA -
Frequency - Transition 230 MHz 180 MHz 230 MHz - 230 MHz -
Power - Max 280 mW 340 mW 360 mW - 280 mW -
Mounting Type Surface Mount Surface Mount, Wettable Flank Surface Mount, Wettable Flank - Surface Mount -
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad - 3-XDFN Exposed Pad -
Supplier Device Package DFN1010D-3 DFN1110D-3 DFN1412D-3 - DFN1010D-3 -

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