PDTC114EMB,315
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Nexperia USA Inc. PDTC114EMB,315

Manufacturer No:
PDTC114EMB,315
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PDTC114EMB,315 Datasheet
ECAD Model:
-
Description:
TRANS PREBIAS NPN 50V DFN1006B-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:230 MHz
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:3-XFDFN
Supplier Device Package:DFN1006B-3
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Similar Products

Part Number PDTC114EMB,315 PDTC115EMB,315   PDTC114TMB,315   PDTC114YMB,315   PDTC114EM,315  
Manufacturer Nexperia USA Inc. NXP Semiconductors Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased - NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 20 mA - 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V - 50 V 50 V
Resistor - Base (R1) 10 kOhms 100 kOhms - 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms 100 kOhms - 47 kOhms 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V 80 @ 5mA, 5V - 100 @ 5mA, 5V 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 250µA, 5mA - 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA - 1µA 1µA
Frequency - Transition 230 MHz 230 MHz - 230 MHz -
Power - Max 250 mW 250 mW - 250 mW 250 mW
Mounting Type Surface Mount Surface Mount - Surface Mount Surface Mount
Package / Case 3-XFDFN SC-101, SOT-883 - 3-XFDFN SC-101, SOT-883
Supplier Device Package DFN1006B-3 DFN1006B-3 - DFN1006B-3 SOT-883

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