Nexperia USA Inc.-PDTA143ZT,235 - Transistors - Bipolar (BJT) - Single, Pre-Biased Product Specifications and Latest Quotes

Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	1µA
Frequency - Transition:	-
Power - Max:	250 mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB

Nexperia USA Inc. PDTA143ZT,235