PDTA143XQB-QZ
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Nexperia USA Inc. PDTA143XQB-QZ

Manufacturer No:
PDTA143XQB-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PDTA143XQB-QZ Datasheet
ECAD Model:
-
Description:
PDTA143XQB-Q/SOT8015/DFN1110D-
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:100mV @ 500µA, 10mA
Current - Collector Cutoff (Max):100nA
Frequency - Transition:180 MHz
Power - Max:340 mW
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
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Similar Products

Part Number PDTA143XQB-QZ PDTA143XQC-QZ   PDTA143ZQB-QZ   PDTA143EQB-QZ  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V
Resistor - Base (R1) 4.7 kOhms 4.7 kOhms 4.7 kOhms 4.7 kOhms
Resistor - Emitter Base (R2) 10 kOhms 10 kOhms 47 kOhms 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V 50 @ 10mA, 5V 100 @ 10mA, 5V 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 500µA, 10mA 100mV @ 500µA, 10mA 100mV @ 250µA, 5mA 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA 100nA 100nA 100nA
Frequency - Transition 180 MHz 180 MHz 180 MHz 180 MHz
Power - Max 340 mW 360 mW 340 mW 340 mW
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1412D-3 DFN1110D-3 DFN1110D-3

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