PDTA124XQBZ
  • Share:

Nexperia USA Inc. PDTA124XQBZ

Manufacturer No:
PDTA124XQBZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PDTA124XQBZ Datasheet
ECAD Model:
-
Description:
PDTA124XQB/SOT8015/DFN1110D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):22 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:100mV @ 500µA, 10mA
Current - Collector Cutoff (Max):100nA
Frequency - Transition:180 MHz
Power - Max:340 mW
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
0 Remaining View Similar

In Stock

$0.27
1,863

Please send RFQ , we will respond immediately.

Similar Products

Part Number PDTA124XQBZ PDTA124XQCZ   PDTA124EQBZ  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Obsolete
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V
Resistor - Base (R1) 22 kOhms 22 kOhms 22 kOhms
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V 80 @ 5mA, 5V 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 500µA, 10mA 100mV @ 500µA, 10mA 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA 100nA 100nA
Frequency - Transition 180 MHz 180 MHz 180 MHz
Power - Max 340 mW 360 mW 340 mW
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3 DFN1412D-3 DFN1110D-3

Related Product By Categories

BCR108WH6327
BCR108WH6327
Infineon Technologies
BIPOLAR DIGITAL TRANSISTOR
RN2106MFV,L3XHF(CT
RN2106MFV,L3XHF(CT
Toshiba Semiconductor and Storage
AUTO AEC-Q PNP Q1BSR=4.7K, Q1BER
UNR221800L
UNR221800L
Panasonic Electronic Components
TRANS PREBIAS NPN 200MW MINI3
UNR412300A
UNR412300A
Panasonic Electronic Components
TRANS PREBIAS PNP 300MW NS-B1
UNR9213G0L
UNR9213G0L
Panasonic Electronic Components
TRANS PREBIAS NPN 125MW SSMINI3
DDTC114WKA-7-F
DDTC114WKA-7-F
Diodes Incorporated
TRANS PREBIAS NPN 200MW SC59-3
RN1102T5LFT
RN1102T5LFT
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A SSM
RN1103CT(TPL3)
RN1103CT(TPL3)
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 20V 0.05A CST3
DDTA143ZCA-7
DDTA143ZCA-7
Diodes Incorporated
TRANS PREBIAS PNP 200MW SOT23-3
PDTA144WS,126
PDTA144WS,126
NXP USA Inc.
TRANS PREBIAS PNP 500MW TO92-3
DTC044EMT2L
DTC044EMT2L
Rohm Semiconductor
TRANS PREBIAS NPN 50V VMT3
DTB113ECHZGT116
DTB113ECHZGT116
Rohm Semiconductor
DTB113ECHZG IS THE HIGH RELIABIL

Related Product By Brand

PMEG60T10ELXD-QX
PMEG60T10ELXD-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BZT52H-C5V6,115
BZT52H-C5V6,115
Nexperia USA Inc.
DIODE ZENER 5.6V 375MW SOD123F
BZX38450-C6V2X
BZX38450-C6V2X
Nexperia USA Inc.
BZX38450-C6V2/SOD323/SOD2
TDZ13J,115
TDZ13J,115
Nexperia USA Inc.
DIODE ZENER 13V 500MW SOD323F
PMV19XNEAR
PMV19XNEAR
Nexperia USA Inc.
MOSFET N-CH 30V 6A TO236AB
74LVC3G17DP,125
74LVC3G17DP,125
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 8TSSOP
74HC3G34DP-Q100H
74HC3G34DP-Q100H
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 8TSSOP
74HC173DB,112
74HC173DB,112
Nexperia USA Inc.
IC FF D-TYPE SNGL 4BIT 16SSOP
HEF4002BT,653
HEF4002BT,653
Nexperia USA Inc.
IC GATE NOR 2CH 4-INP 14SO
74HCT1G04GV-Q100H
74HCT1G04GV-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP SC74A
74HC3G04DP-Q100/AH
74HC3G04DP-Q100/AH
Nexperia USA Inc.
IC INVERTER 3CH 3-INP 8TSSOP
CBT16292DGG,118
CBT16292DGG,118
Nexperia USA Inc.
IC MUX/DEMUX 12 X 1:2 56TSSOP