Nexperia USA Inc.-PDTA123YMB,315 - Transistors - Bipolar (BJT) - Single, Pre-Biased Product Specifications and Latest Quotes

Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Resistor - Base (R1):	2.2 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	35 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	1µA
Frequency - Transition:	180 MHz
Power - Max:	250 mW
Mounting Type:	Surface Mount
Package / Case:	3-XFDFN
Supplier Device Package:	DFN1006B-3

Nexperia USA Inc. PDTA123YMB,315