PDTA114EQCZ
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Nexperia USA Inc. PDTA114EQCZ

Manufacturer No:
PDTA114EQCZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
PDTA114EQCZ Datasheet
ECAD Model:
-
Description:
PDTA114EQC/SOT8009/DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:100mV @ 500µA, 10mA
Current - Collector Cutoff (Max):100nA
Frequency - Transition:180 MHz
Power - Max:360 mW
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
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Similar Products

Part Number PDTA114EQCZ PDTA124EQCZ   PDTA114YQCZ   PDTA114EQAZ   PDTA114EQBZ  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Obsolete Active Obsolete
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased - PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA - 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V - 50 V
Resistor - Base (R1) 10 kOhms 22 kOhms 10 kOhms - 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms 22 kOhms 47 kOhms - 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V 60 @ 5mA, 5V 100 @ 5mA, 5V - 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 500µA, 10mA 100mV @ 500µA, 10mA 100mV @ 250µA, 5mA - 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA 100nA 100nA - 100nA
Frequency - Transition 180 MHz 180 MHz 180 MHz - 180 MHz
Power - Max 360 mW 360 mW 360 mW - 340 mW
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank Surface Mount, Wettable Flank - Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad 3-XDFN Exposed Pad - 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1412D-3 DFN1412D-3 - DFN1110D-3

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