Nexperia USA Inc.-PBSS9410PA,115 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	PNP
Current - Collector (Ic) (Max):	2.7 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	450mV @ 135mA, 2.7A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	170 @ 1A, 2V
Power - Max:	2.1 W
Frequency - Transition:	115MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	3-PowerUDFN
Supplier Device Package:	3-HUSON (2x2)

Nexperia USA Inc. PBSS9410PA,115