Nexperia USA Inc.-PBSS9110X,135 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	PBSS9110X,135	PBSS9110Z,135	PBSS8110X,135
Manufacturer	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.
Product Status	Active	Active	Active
Transistor Type	PNP	PNP	NPN
Current - Collector (Ic) (Max)	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	100 V
Vce Saturation (Max) @ Ib, Ic	320mV @ 100mA, 1A	320mV @ 100mA, 1A	200mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100nA	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 500mA, 5V	150 @ 500mA, 5V	150 @ 250mA, 10V
Power - Max	2 W	1.4 W	2 W
Frequency - Transition	100MHz	100MHz	100MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-243AA	TO-261-4, TO-261AA	TO-243AA
Supplier Device Package	SOT-89	SOT-223	SOT-89

Nexperia USA Inc. PBSS9110X,135

Transistor Type:	PNP
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	320mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	150 @ 500mA, 5V
Power - Max:	2 W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89