Nexperia USA Inc.-PBSS8510PA,115 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	5.2 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	340mV @ 260mA, 5.2A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	95 @ 2A, 2V
Power - Max:	2.1 W
Frequency - Transition:	150MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	3-PowerUDFN
Supplier Device Package:	3-HUSON (2x2)

Nexperia USA Inc. PBSS8510PA,115