Nexperia USA Inc.-PBSS8110X,135 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	PBSS8110X,135	PBSS8110Z,135	PBSS9110X,135
Manufacturer	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.
Product Status	Active	Active	Active
Transistor Type	NPN	NPN	PNP
Current - Collector (Ic) (Max)	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V	100 V
Vce Saturation (Max) @ Ib, Ic	200mV @ 100mA, 1A	200mV @ 100mA, 1A	320mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100nA	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 250mA, 10V	150 @ 250mA, 10V	150 @ 500mA, 5V
Power - Max	2 W	1.4 W	2 W
Frequency - Transition	100MHz	100MHz	100MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-243AA	TO-261-4, TO-261AA	TO-243AA
Supplier Device Package	SOT-89	SOT-223	SOT-89

Nexperia USA Inc. PBSS8110X,135

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	200mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	150 @ 250mA, 10V
Power - Max:	2 W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89