Nexperia USA Inc.-PBSS8110TVL - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	200mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	150 @ 250mA, 1V
Power - Max:	-
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB

Nexperia USA Inc. PBSS8110TVL