Nexperia USA Inc.-PBSS8110T,215 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	PBSS8110T,215	PBSS9110T,215
Manufacturer	Nexperia USA Inc.	Nexperia USA Inc.
Product Status	Active	Active
Transistor Type	NPN	PNP
Current - Collector (Ic) (Max)	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V
Vce Saturation (Max) @ Ib, Ic	200mV @ 100mA, 1A	320mV @ 100mA, 1A
Current - Collector Cutoff (Max)	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 250mA, 10V	150 @ 500mA, 5V
Power - Max	480 mW	480 mW
Frequency - Transition	100MHz	100MHz
Operating Temperature	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	TO-236AB	TO-236AB

Nexperia USA Inc. PBSS8110T,215

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	200mV @ 100mA, 1A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	150 @ 250mA, 10V
Power - Max:	480 mW
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB