Nexperia USA Inc.-PBHV9215Z,115 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	PBHV9215Z,115	PBHV8215Z,115	PBHV9115Z,115
Manufacturer	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.
Product Status	Active	Active	Active
Transistor Type	PNP	NPN	PNP
Current - Collector (Ic) (Max)	2 A	2 A	1 A
Voltage - Collector Emitter Breakdown (Max)	150 V	150 V	150 V
Vce Saturation (Max) @ Ib, Ic	350mV @ 400mA, 2A	280mV @ 400mA, 2A	300mV @ 100mA, 500mA
Current - Collector Cutoff (Max)	100nA	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A, 10V	100 @ 1A, 10V	100 @ 100mA, 10V
Power - Max	1.45 W	1.45 W	1.4 W
Frequency - Transition	35MHz	33MHz	115MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA
Supplier Device Package	SOT-223	SOT-223	SOT-223

Nexperia USA Inc. PBHV9215Z,115

Transistor Type:	PNP
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	150 V
Vce Saturation (Max) @ Ib, Ic:	350mV @ 400mA, 2A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 1A, 10V
Power - Max:	1.45 W
Frequency - Transition:	35MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223