Nexperia USA Inc.-PBHV8215Z,115 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	PBHV8215Z,115	PBHV9215Z,115	PBHV8115Z,115
Manufacturer	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.
Product Status	Active	Active	Active
Transistor Type	NPN	PNP	NPN
Current - Collector (Ic) (Max)	2 A	2 A	1 A
Voltage - Collector Emitter Breakdown (Max)	150 V	150 V	150 V
Vce Saturation (Max) @ Ib, Ic	280mV @ 400mA, 2A	350mV @ 400mA, 2A	350mV @ 200mA, 1A
Current - Collector Cutoff (Max)	100nA	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1A, 10V	80 @ 1A, 10V	50 @ 500mA, 10V
Power - Max	1.45 W	1.45 W	1.4 W
Frequency - Transition	33MHz	35MHz	30MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA	TO-261-4, TO-261AA
Supplier Device Package	SOT-223	SOT-223	SOT-223

Nexperia USA Inc. PBHV8215Z,115

Transistor Type:	NPN
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	150 V
Vce Saturation (Max) @ Ib, Ic:	280mV @ 400mA, 2A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1A, 10V
Power - Max:	1.45 W
Frequency - Transition:	33MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223