Nexperia USA Inc.-PBHV8115X,115 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	PBHV8115X,115	PBHV8115Z,115	PBHV9115X,115
Manufacturer	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.
Product Status	Active	Active	Active
Transistor Type	NPN	NPN	PNP
Current - Collector (Ic) (Max)	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	150 V	150 V	150 V
Vce Saturation (Max) @ Ib, Ic	50mV @ 20mA, 100mA	350mV @ 200mA, 1A	300mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 50mA, 10V	50 @ 500mA, 10V	100 @ 100mA, 10V
Power - Max	1.5 W	1.4 W	1.5 W
Frequency - Transition	30MHz	30MHz	115MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-243AA	TO-261-4, TO-261AA	TO-243AA
Supplier Device Package	SOT-89	SOT-223	SOT-89

Nexperia USA Inc. PBHV8115X,115

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	150 V
Vce Saturation (Max) @ Ib, Ic:	50mV @ 20mA, 100mA
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 50mA, 10V
Power - Max:	1.5 W
Frequency - Transition:	30MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89