Nexperia USA Inc.-PBHV8115T,215 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	PBHV8115T,215	PBHV8118T,215	PBHV9115T,215
Manufacturer	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.
Product Status	Active	Active	Active
Transistor Type	NPN	NPN	PNP
Current - Collector (Ic) (Max)	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	150 V	180 V	150 V
Vce Saturation (Max) @ Ib, Ic	350mV @ 200mA, 1A	50mV @ 20mA, 100mA	300mV @ 100mA, 500mA
Current - Collector Cutoff (Max)	100nA	100nA	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 500mA, 10V	50 @ 500mA, 10V	100 @ 100mA, 10V
Power - Max	300 mW	300 mW	300 mW
Frequency - Transition	30MHz	30MHz	115MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	TO-236AB	TO-236AB	TO-236AB

Nexperia USA Inc. PBHV8115T,215

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	150 V
Vce Saturation (Max) @ Ib, Ic:	350mV @ 200mA, 1A
Current - Collector Cutoff (Max):	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 500mA, 10V
Power - Max:	300 mW
Frequency - Transition:	30MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB