Nexperia USA Inc.-NX1029XH - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	N and P-Channel Complementary
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	50V
Current - Continuous Drain (Id) @ 25°C:	330mA (Ta), 170mA (Ta)
Rds On (Max) @ Id, Vgs:	1.6Ohm @ 500mA, 10V, 7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:	2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	600pC @ 4.5V, 350pC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:	50pF @ 10V, 36pF @ 25V
Power - Max:	330mW (Ta), 1.09W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-666

Nexperia USA Inc. NX1029XH