Nexperia USA Inc.-NHUMB1X - Transistors - Bipolar (BJT) - Arrays, Pre-Biased Product Specifications and Latest Quotes

Transistor Type:	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	80V
Resistor - Base (R1):	22kOhms
Resistor - Emitter Base (R2):	22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	100mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	100nA
Frequency - Transition:	150MHz
Power - Max:	235mW
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	6-TSSOP

Nexperia USA Inc. NHUMB1X