Nexperia USA Inc.-GAN063-650WSAQ - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	34.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	15 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1000 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	143W (Ta)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247-3
Package / Case:	TO-247-3

Nexperia USA Inc. GAN063-650WSAQ