Nexperia USA Inc.-BUK9Y38-100E,115 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	38mOhm @ 5A, 5V
Vgs(th) (Max) @ Id:	2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	21.6 nC @ 5 V
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	2541 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	94.9W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	LFPAK56, Power-SO8
Package / Case:	SC-100, SOT-669

Nexperia USA Inc. BUK9Y38-100E,115