BUK9Y19-100E,115
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Nexperia USA Inc. BUK9Y19-100E,115

Manufacturer No:
BUK9Y19-100E,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
BUK9Y19-100E,115 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 56A LFPAK56
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:18mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:5085 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):167W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number BUK9Y19-100E,115 BUK9Y12-100E,115   BUK9Y15-100E,115  
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 56A (Tc) 85A (Tc) 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V 5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 15A, 10V 12mOhm @ 25A, 5V 14.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA 2.1V @ 1mA 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 5 V 64 nC @ 5 V 45.8 nC @ 5 V
Vgs (Max) ±10V ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 5085 pF @ 25 V 7973 pF @ 25 V 6139 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 167W (Tc) 238W (Tc) 195W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

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