BUK9M3R3-40HX
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Nexperia USA Inc. BUK9M3R3-40HX

Manufacturer No:
BUK9M3R3-40HX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Datasheet:
BUK9M3R3-40HX Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 80A LFPAK33
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:3766 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):101W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK33
Package / Case:SOT-1210, 8-LFPAK33 (5-Lead)
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Similar Products

Part Number BUK9M3R3-40HX BUK9M4R3-40HX  
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Ta) 95A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 25A, 10V 4.3mOhm @ 95A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±16V -
Input Capacitance (Ciss) (Max) @ Vds 3766 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 101W (Ta) 90W
Operating Temperature -55°C ~ 175°C (TJ) 175°C
Mounting Type Surface Mount Surface Mount
Supplier Device Package LFPAK33 LFPAK33
Package / Case SOT-1210, 8-LFPAK33 (5-Lead) SOT-1210, 8-LFPAK33 (5-Lead)

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